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Journal Articles

Charge exchange method of H$$^{-}$$ beam by electron beam

Okabe, Kota

Proceedings of 17th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.446 - 448, 2020/09

One of the important research themes for further enhancement of the proton accelerator is the advancement of the charge exchange injection method. At present, the charge exchange injection method in the high-intensity proton accelerator facility currently in operation mainly uses the charge exchange foil. However, this method has a problem in that activation of the around the charge exchange injection point due to beam scattering by the foil and neutrons generated from the foil. In order to solve this problem, new charge exchange injection methods such as laser charge exchange method are being researched in accelerator facilities around the world. In this research, we focus on the charge exchange method using electron beams and proceed with the basic experiments. In this presentation, we will report the progress of the charge exchange efficiency measurement of negative hydrogen ion beam using electron beam.

Journal Articles

Enhanced damage buildup in C$$^{+}$$-implanted GaN film studied by a monoenergetic positron beam

Li, X. F.*; Chen, Z. Q.*; Liu, C.*; Zhang, H.; Kawasuso, Atsuo

Journal of Applied Physics, 117(8), p.085706_1 - 085706_6, 2015/02

 Times Cited Count:23 Percentile:68.13(Physics, Applied)

Vacancy-type defects in C$$^{+}$$-implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter indicates introduction of arge vacancy clusters. Post-implantation annealing at temperatures up to 800$$^{circ}$$C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000$$^{circ}$$C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C$$^{+}$$-implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.

Journal Articles

Defect layer in SiO$$_2$$-SiC interface proved by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Physica B; Condensed Matter, 376-377, p.354 - 357, 2006/04

 Times Cited Count:2 Percentile:12.58(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Optics and beam transport in energy-recovery linacs

Hajima, Ryoichi

Nuclear Instruments and Methods in Physics Research A, 557(1), p.45 - 50, 2006/02

 Times Cited Count:2 Percentile:21.09(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Effect of ion species on the production and thermal evolution of implantation induced defects in ZnO

Chen, Z. Q.; Maekawa, Masaki; Kawasuso, Atsuo; Sakai, Seiji; Naramoto, Hiroshi*

JAEA-Review 2005-001, TIARA Annual Report 2004, p.232 - 234, 2006/01

no abstracts in English

Journal Articles

Structure of SiO$$_2$$/4H-SiC interface probed by positron annihilation spectroscopy

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Physical Review B, 73(1), p.014111_1 - 014111_9, 2006/01

 Times Cited Count:20 Percentile:64.46(Materials Science, Multidisciplinary)

no abstracts in English

JAEA Reports

Cross-field flow of plasma produced by electron beam evaporation

Takayanagi, Tomohiro*; Ikehata, Takashi*; Mase, Hiroshi*; Oba, Hironori; Shibata, Takemasa

JAERI-Research 2005-024, 14 Pages, 2005/09

JAERI-Research-2005-024.pdf:1.71MB

A weakly ionized plasma contained in the gadolinium atomic beam produced by electron beam heating was passed led to a magnetic field of 0$$sim$$$$pm$$1.5kG between iron cores. When the magnetic field was applied, the instability appeared in the ion saturation current. With increasing the magnetic field, the ions detected by the ion collectors decreased and no ions were detected at all. The magnetic field intensity at which the plasma does not flow and ions are not detected does not depend on plasma ion density. At this magnetic field, Larmor radius of ions are two times wider than plasma width. In addition, it is found that the plasma contained in the atomic beam can be removed by the magnetic field.

Journal Articles

Quasi-monoenergetic electron beam generation during laser pulse interaction with very low density plasmas

Yamazaki, Atsushi; Kotaki, Hideyuki; Daito, Izuru; Kando, Masaki; Bulanov, S. V.; Esirkepov, T. Z.; Kondo, Shuji; Kanazawa, Shuhei; Homma, Takayuki*; Nakajima, Kazuhisa; et al.

Physics of Plasmas, 12(9), p.093101_1 - 093101_5, 2005/09

 Times Cited Count:70 Percentile:88.77(Physics, Fluids & Plasmas)

no abstracts in English

Journal Articles

Interaction of nitrogen with vacancy defects in N$$^{+}$$-implanted ZnO studied using a slow positron beam

Chen, Z. Q.; Maekawa, Masaki; Kawasuso, Atsuo; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Applied Physics Letters, 87(9), p.091910_1 - 091910_3, 2005/08

 Times Cited Count:31 Percentile:71.4(Physics, Applied)

Zinc oxide crystals were implanted with N$$^+$$, O$$^+$$, and co-implanted with O$$^+$$/N$$^+$$ ions. Positron annihilation measurements show the introduction of vacancy clusters upon implantation. In the N$$^+$$-implanted sample, these vacancy clusters are only partially annealed at 800$$^{circ}$$C as compared to their full recovery in the O$$^+$$-implanted sample, suggesting a strong interaction between nitrogen and vacancy clusters. At 1000-1100$$^{circ}$$C, nitrogen also forms stable complexes with thermally generated vacancies. To remove all the detectable vacancy defects, a high temperature annealing at 1250$$^{circ}$$C is needed. Furthermore, Hall measurements of this sample show n-type conductivity though nitrogen is expected as acceptors. On the contrary, in the O$$^+$$/N$$^+$$ co-implanted sample, most vacancy clusters disappear at 800$$^{circ}$$C. Probably oxygen scavenges nitrogen to form N-O complexes and hence enhance the annealing of vacancy clusters. A highly compensated semi-insulating layer is formed in the co-implanted sample.

Journal Articles

Calculation of spatial distribution of dose rate for air under 300keV electron beam irradiation using a Monte Carlo code (EGS4-SPG code)

Hakoda, Teruyuki; Hanaya, Hiroaki; Kaneko, Hirohisa; Miyashita, Atsumi; Kojima, Takuji

Radioisotopes, 54(6), p.161 - 168, 2005/06

no abstracts in English

Journal Articles

Structural defects in SiO$$_2$$/SiC interface probed by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Chen, Z. Q.; Yoshikawa, Masahito; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Applied Surface Science, 244(1-4), p.322 - 325, 2005/05

 Times Cited Count:13 Percentile:49.98(Chemistry, Physical)

no abstracts in English

Journal Articles

Optical diagnostics

Kawano, Yasunori

Denki Gakkai Gijutsu Hokoku, Dai-1018-Go, p.25 - 29, 2005/05

Aims of "The Investigation Committee on Pulsed Power Generation and Application" are to investigate recent developments on generation and control of pulsed power, to clarify the technological issues, and to provide the future prospects of such research area. This paper is written as the "section 3.3 Optical Diagnostics" in the technical report of the committee. Here, "diagnostics of relativistic electron beam in a torus plasma by laser inverse Compton scattering" is reported. This method has been newly proposed by JAERI for active measurement of the energy distribution of runaway electrons in a tokamak plasma. The paper presents the basic properties of scattered photons estimated in the case of runaway electron beam observed in JT-60U (number of beam electrons=2e17 electrons, beam electron energy = 30 MeV). For instance, when we use the fundamental YAG laser with the energy of 10 J/pulse and pulse widths of 1 ns, maximum energy of scattered photons would be in the X-ray region, and the signal to noise ratio can be estimated as $$sim$$3. It is also mentioned that the development of the pulse X-ray imaging spectroscopy is required for this diagnostics method.

Journal Articles

Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam

Chen, Z. Q.; Kawasuso, Atsuo; Xu, Y.; Naramoto, Hiroshi*; Yuan, X. L.*; Sekiguchi, Takashi*; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Physical Review B, 71(11), p.115213_1 - 115213_8, 2005/03

 Times Cited Count:106 Percentile:93.71(Materials Science, Multidisciplinary)

ZnO crystals were implanted with 20-80 keV hydrogen ions up to a total dose of 4.4$$times$$10$$^{15}$$ cm$$^{-2}$$. Positron annihilation measurements show introduction of zinc vacancies, which are filled with hydrogen atoms. After isochronal annealing at 200-500 $$^{circ}$$C, the vacancies agglomerate into hydrogen bubbles. Further annealing at 600-700 $$^{circ}$$C causes release of hydrogen out of the bubbles, leaving large amount of microvoids. These microvoids are annealed out at high temperature of 1000 $$^{circ}$$C. Cathodoluminescence measurements reveal that hydrogen ions also passivate deep level emission centers before their release from the sample, and lead to the improvement of the UV emission.

Journal Articles

Production and recovery of defects in phosphorus-implanted ZnO

Chen, Z. Q.; Kawasuso, Atsuo; Xu, Y.; Naramoto, Hiroshi; Yuan, X. L.*; Sekiguchi, Takashi*; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Journal of Applied Physics, 97(1), p.013528_1 - 013528_6, 2005/01

 Times Cited Count:147 Percentile:96.39(Physics, Applied)

Phosphorus ions were implanted into ZnO crystals with energies of 50-380 keV to a dose of 10$$^{13}$$-10$$^{15}$$ cm$$^{-2}$$. Positron annihilation measurements show the introduction of vacancy clusters after implantation. These vacancy clusters evolve to microvoids after annealing at a temperature of 600$$^{circ}$$C, and disappear gradually up to 1100$$^{circ}$$C. Raman scattering measurements show the production of oxygen vacancies (V$$_{O}$$). They are annealed up to 700$$^{circ}$$C accompanying the agglomeration of vacancy clusters. The light emissions of ZnO are suppressed due to the competing nonradiative recombination centers introduced by implantation. Recovery of the light emission occurs above 600$$^{circ}$$C. The vacancy-type defects detected by positrons might be part of the nonradiative recombination centers. Hall measurement shows n-type conductivity for the P$$^+$$-implanted ZnO layer, which suggests that phosphorus is an amphoteric dopant.

Journal Articles

Construction of intense positron source based on AVF cyclotron for high brightness positron beam, 2

Maekawa, Masaki; Kawasuso, Atsuo; Kashima, Fumihiko*; Chen, Z. Q.

JAERI-Review 2004-025, TIARA Annual Report 2003, p.299 - 301, 2004/11

no abstracts in English

Journal Articles

Hydrogen bubble formation in H-implanted ZnO studied using a slow positron beam

Chen, Z. Q.; Maekawa, Masaki; Kawasuso, Atsuo; Yamamoto, Shunya; Yuan, X. L.*; Sekiguchi, Takashi*; Suzuki, Ryoichi*; Odaira, Toshiyuki*

JAERI-Review 2004-025, TIARA Annual Report 2003, p.193 - 195, 2004/11

20-80 keV hydrogen ions were implanted into ZnO single crystals up to a total dose of 4.4$$times$$10$$^{15}$$ cm$$^{-2}$$. Positron annihilation measurements using a slow positron beam revealed introduction of vacancies after implantation, which are filled with hydrogen impurities. After annealing, these hydrogen filled vacancies grow into large hydrogen bubbles. At annealing temperature of 500-700$$^{circ}$$C, these hydrogen impurities are released from the bubbles, and remain open microvoids. These microvoids are finally annealed out at about 1100$$^{circ}$$C. The effects of hydrogen implantation on the light luminescence in ZnO will also be discussed.

Journal Articles

A Coherent positron beam for reflection high-energy positron diffraction

Kawasuso, Atsuo; Ishimoto, Takayuki*; Maekawa, Masaki; Fukaya, Yuki; Hayashi, Kazuhiko; Ichimiya, Ayahiko

Review of Scientific Instruments, 75(11), p.4585 - 4588, 2004/11

 Times Cited Count:33 Percentile:80.32(Instruments & Instrumentation)

A 10 keV positron beam has been developed using coaxially symmetric electromagnetic lenses for reflection high-energy positron diffraction (RHEPD) experiments. The beam brightness is $$sim$$10$$^{7}$$ e$$^{+}$$/sec/cm$$^{2}$$/rad$$^{2}$$/V which is comparable to that obtained using brightness enhancement technique. The beam parallel and normal coherence lengths are over 100 ${AA}$ and 40 ${AA}$ , respectively, which are long enough to observe diffraction patterns associated with large surface super-structures. RHEPD patterns from a Si(111)-(7$$times$$7) reconstructed surface have been successfully observed with a much better quality than previously reported.

Journal Articles

Generation of high quality electron beam by laser-plasma interaction

Kotaki, Hideyuki; Masuda, Shinichi; Kando, Masaki; Kondo, Shuji; Kanazawa, Shuhei; Homma, Takayuki; Nakajima, Kazuhisa

Quantum Aspects of Beam Physics 2003, p.119 - 124, 2004/10

 Times Cited Count:0 Percentile:0.4(Astronomy & Astrophysics)

no abstracts in English

Journal Articles

Interface properties of 4H-SiC MOS structures studied by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Ichimiya, Ayahiko

Materials Science Forum, 445-446, p.144 - 146, 2004/05

no abstracts in English

196 (Records 1-20 displayed on this page)